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    Q: The frequency of green light is 6 × 10¹⁴ Hz. Its wavelength is (Entry test 2015)

    A) 50 nm
    B) 500 nm
    C) 5000 nm
    D) 100 nm

    Q: Which of the following rays are not electromagnetic radiations? (Entry test 2015)

    A) X-rays
    B) UV rays
    C) Cathode rays
    D) Infrared rays

    Q: If C and R denote the capacitance and resistance respectively, the dimensions of CR are (Entry test 2016)

    A) M⁰L²T
    B) M⁰L⁰T
    C) M⁰L⁰T⁰
    D) M⁰LT⁻¹

    Q: The applied force which the solid can withstand without breaking is called (ET 2006)

    A) stiffness of solid
    B) strength of solid
    C) Ductility of solid
    D) Toughness of solid

    Q: Which of the following is not ferromagnetic substance (ET 2016)

    A) Iron
    B) Cobalt
    C) Nickel
    D) Barium

    Q: The shear modulus of elasticity G is (ET 2015)

    A) A l / Fθ
    B) F l / Aθ
    C) F / Aθ
    D) Aθ / F

    Q: The word amorphous means without (ET 2015)

    A) Shape
    B) Structure
    C) Size
    D) Volume

    Q: The ratio of volumetric strain to volumetric stress is called (ET 2011)

    A) Compressibility
    B) Young's Modulus
    C) Bulk's Modulus
    D) Shear's Modulus

    Q: The substance which undergoes plastic deformation until it breaks is (ET 2011)

    A) Ductile substance
    B) Brittle substance
    C) Plastic substances
    D) All of these

    Q: Which one of the following is not a polymer? (ET 2010)

    A) Plastic
    B) Petroleum
    C) Starch
    D) Natural rubber

    Q: The substances which undergoes deformation with small force are called (ET 2010)

    A) Elastic substance
    B) Inelastic substances
    C) Diamagnetic substance
    D) Ductile substance

    Q: The unit cell of the semiconductor crystals is (ET 2010)

    A) Face centered cube
    B) Simple cube
    C) Body centered cube
    D) Hexagonal

    Q: The solids in which molecules or ions are arranged in a regular repetitive manner are called (ET 2009)

    A) Amorphous solids
    B) Glassy solids
    C) Polymers
    D) Crystals

    Q: Conversion of alternating current into direct current is called (ET 2010)

    A) Rectification
    B) Amplification
    C) Oscillation
    D) Regeneration

    Q: The current in semiconductor is caused by the movement of (ET 2009)

    A) Protons
    B) Electrons only
    C) Holes only
    D) Both electrons and holes

    Q: The temperature coefficient of resistance of a semiconductor is (ET 2016)

    A) Positive
    B) Negative
    C) Imaginary
    D) Zero

    Q: Intrinsic semiconductor can be converted into extrinsic semiconductor by adding (ET 2016)

    A) Trivalent impurity
    B) Pentavalent impurity
    C) Pentavalent or trivalent impurities
    D) None of the above

    Q: In a transistor the emitter to base junction is (Entry Test 2010)

    A) Reverse biased
    B) Forward biased
    C) Neutral
    D) None

    Q: The process by which the potential barrier of depletion region can be increased or decreased is called (Entry Test 2011)

    A) Amplification
    B) Biasing
    C) Modulation
    D) Doping

    Q: In P-type substances, the minority charge carriers are (ET 2015)

    A) Holes
    B) Electrons
    C) Protons
    D) Positive ions
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