Q: The temperature coefficient of resistance of a semiconductor is (ET 2016)
Q: Intrinsic semiconductor can be converted into extrinsic semiconductor by adding (ET 2016)
Q: In a transistor the emitter to base junction is (Entry Test 2010)
Q: The process by which the potential barrier of depletion region can be increased or decreased is called (Entry Test 2011)
Q: In P-type substances, the minority charge carriers are (ET 2015)
Q: The diode that converts electrical energy into light energy is called (ET 2012)
Q: The ratio of output voltage Vo to the voltage difference Vin between positive and negative input of op-amp is (ET 2012)
Q: Operational amplifiers can amplify (ET 2014)
Q: In Compton scattering from stationary electrons the largest change in wavelength occurs when the photon is scattered through (ET 2016)
Q: Which property of an electron is used in the electron microscope? (ET 2016)
Q: The number of photoelectrons emitted per second from the metal surface depends upon (Entry Test 2007)
Q: Three metals cesium, potassium, tungsten are illuminated by same frequency light. Which emits photoelectrons of greatest K.E.? (Entry Test 2009)
Q: If the frequency of incident light beam is doubled, the kinetic energy of the emitted photoelectron is (ET 2009)
Q: The rest mass energy of electron is (Entry Test 2010)
Q: The best shield against X-rays is (Entry Test 2010)
Q: The wave nature of an electron is illustrated by its (Entry Test 2011-2015)
Q: The scattering angle θ for which Compton shift is equal to Compton wavelength is (Entry Test 2011/2016)
Q: The uncertainty in energy of photon emitted from an atom radiating for 10⁻⁸ s is (Entry Test 2011-2014)
Q: If the temperature of the blackbody becomes doubled, the intensity of radiation becomes (Entry Test 2011)
Q: If intensity of monochromatic beam of light is doubled, the momentum of each photon becomes (ET 2016)